Electronic Devices

-4

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

A. Directly proportional to the doping concentration
B. Inversely proportional to the doping concentration
C. Directly proportional to the intrinsic concentration
D. Inversely proportional to the intrinsic concentration

-3

In n-well CMOS fabrication substrate is

A. lightly doped n-type
B. lightly doped p-type
C. heavily doped n-type
D. heavily doped p-type

-2

The sheet resistance of a semiconductor is

A. an important characteristic of a diffused region especially when used to form diffused resistors
B. an undesirable parasitic element
C. a characteristic whose value determines the required area for a given value of integrated capacitance
D. a parameter whose value is important in a thin-film resistance

-1

A MOS capacitor has oxide thickness tox of 50 nm. The capacitance is

A. 101 nF/cm2
B. 69 nF/cm2
C. 84 nF/cm2
D. None of the above